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| PLASTIC INFRARED LIGHT EMITTING DIODE QED422 PACKAGE DIMENSIONS 0.190 (4.83) 0.178 (4.52) QED423 REFERENCE SURFACE 0.220 (5.59) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) CATHODE 0.100 (2.54) NOM O 0.215 (5.46) NOM SCHEMATIC 45 0.020 (0.51) SQ. (2X) ANODE R 0.022 (0.56) CATHODE NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified. DESCRIPTION The QED422/423 is an 880 nm AlGaAs LED encapsulated in a clear, purple tinted, plastic TO-46 package. FEATURES * * * * * * * = 880 nm Chip material = AlGaAs Package type: Plastic TO-46 Matched Photosensor: QSD722/723/724 Medium Wide Emission Angle, 30 High Output Power Package material and color: clear, purple tinted, plastic (c) 2002 Fairchild Semiconductor Corporation Page 1 of 4 6/13/02 PLASTIC INFRARED LIGHT EMITTING DIODE QED422 ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise specified) Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Symbol TOPR TSTG TSOL-I TSOL-F IF VR PD Rating -40 to + 100 -40 to + 100 240 for 5 sec 260 for 10 sec 100 5 200 Unit C C C C mA V mW QED423 Soldering Temperature (Flow)(2,3) Continuous Forward Current Reverse Voltage Power Dissipation(1) NOTES: 1. Derate power dissipation linearly 2.67 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6 mm) minimum from housing . ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25C) Parameter Peak Emission Wavelength Emission Angle Forward Voltage Reverse Current Radiant Intensity QEC522 Radiant Intensity QEC523 Rise Time Fall Time Test Conditions IF = 100 mA IF = 100 mA IF = 100 mA, tp = 20 ms VR = 5 V IF = 100 mA, tp = 20 ms IF = 100 mA, tp = 20 ms IF = 100 mA Symbol PE 21/2 VF IR IE IE tr tf Min -- -- -- -- 10 20 -- -- Typ 880 30 -- -- -- -- 800 800 Max -- -- 1.8 10 40 -- -- -- Units nm Deg. V A mW/sr mW/sr ns ns (c) 2002 Fairchild Semiconductor Corporation Page 2 of 4 6/13/02 PLASTIC INFRARED LIGHT EMITTING DIODE QED422 Fig. 1 Normalized Radiant Intensity vs. Forward Current Ie - NORMALIZED RADIANT INTENSITY 10 Normalized to: IF = 100 mA Pulsed tpw = 100 s Duty Cycle = 0.1 % TA = 25C 2.0 IF = 50 mA QED423 Fig. 2 Forward Voltage vs. Ambient Temperature VF - FORWARD VOLTAGE (V) IF = 100 mA 1.5 1 0.1 1.0 IF = 20 mA IF = 10 mA 0.01 0.5 Normalized to: IF Pulsed tpw = 100 s Duty Cycle = 0.1 % -20 0 20 40 60 80 100 0.001 1 10 100 1000 0.0 -40 IF - FORWARD CURRENT (mA) TA - AMBIENT TEMPERATURE (C) Fig. 3 Normalized Radiant Intensity vs. Wavelength 1.0 Fig. 4 Radiation Diagram 110 120 130 140 100 90 80 70 60 50 40 30 20 10 0 1.0 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 1.0 NORMALIZED RADIANT INTENSITY 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 180 775 800 825 850 875 900 925 950 150 160 170 (nm) (c) 2002 Fairchild Semiconductor Corporation Page 3 of 4 6/13/02 PLASTIC INFRARED LIGHT EMITTING DIODE QED422 QED423 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. (c) 2002 Fairchild Semiconductor Corporation Page 4 of 4 6/13/02 |
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